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  1mh Datasheet PDF File

For 1mh Found Datasheets File :: 2971    Search Time::1.75ms    
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    49470SC 492R2SC 49221SC 493R3SC 494R7SC 49331SC 49330SC 49101SC 49100SC 49102SC 49150SC

Murata Manufacturing Co., Ltd.
http://
Murata Manufacturing Co...
Part No. 49470SC 492R2SC 49221SC 493R3SC 494R7SC 49331SC 49330SC 49101SC 49100SC 49102SC 49150SC
OCR Text ...EATURES RoHS compliant 1.0H to 1mh Up to 11.8A IDC Bobbin format Surface mount Integral EMI shield Compact size Tape and reel packaging UL 94V-0 materials J-STD-020-C reflow MECHANICAL DIMENSIONS DESCRIPTION The 4900S series is a ra...
Description Shielded Surface Mount Power Inductors
   Shielded Surface Mount Power Inductors

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    15683C KMP1500 15334C 15684C 15154C 15153C 15152C 15473C 15333C 15474C

Murata Manufacturing Co., Ltd.
Murata Manufacturing Co...
Part No. 15683C KMP1500 15334C 15684C 15154C 15153C 15152C 15473C 15333C 15474C
OCR Text ...INDUCTANCE Vs CURRENT 10000 1mh 1000 Inductance, L (H) 100H 100 10H 10 1H 1 0.1 0.001 0.01 0.1 1 10 100 Current, IDC (A) TEMPERATURE Vs CURRENT 60 1mh 100H 10H 1H 50 40 30 20...
Description Radial Lead Inductors

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    INTERSIL[Intersil Corporation]
Part No. HGTP3N60C3 HGTD3N60C3S FN4139
OCR Text ... 150oC, RG = 82, VGE = 15V, L = 1mh Gate to Emitter Plateau Voltage On-State Gate Charge VGEP Qg(ON) td(ON)I trI td(OFF)I tfI EON EOFF RJC IC = IC110, VCE = 0.5 BVCES IC = IC110, VCE = 0.5 BVCES TJ = 150oC ICE = IC110 VCE(PK) = 0.8...
Description 6A/ 600V/ UFS Series N-Channel IGBTs
6A, 600V, UFS Series N-Channel IGBTs
From old datasheet system

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    INTERSIL[Intersil Corporation]
Part No. HGTP3N60B3 HGT1S3N60B3S HGTD3N60B3S FN4368
OCR Text ...0.8 BVCES VGE = 15V RG = 82 L = 1mh Test Circuit (Figure 17) 2 HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 Electrical Specifications PARAMETER Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn...
Description 7A/ 600V/ UFS Series N-Channel IGBTs
7A, 600V, UFS Series N-Channel IGBTs
From old datasheet system

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    HGTP3N60B3

Fairchild Semiconductor
Part No. HGTP3N60B3
OCR Text ...ces v ge = 15v r g = 82 ? l = 1mh test circuit (figure 17) -18 - ns current rise time t ri -16 - ns current turn-off delay time t d(off)i - 105 - ns current fall time t fi -70 - ns turn-on energy e on -6675 j turn-off energy (note 3) e o...
Description 7A, 600V, UFS Series N-Channel IGBTs

File Size 203.94K  /  7 Page

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    HGTP3N60B3D

Fairchild Semiconductor
Part No. HGTP3N60B3D
OCR Text ...ces v ge = 15v r g = 82 ? l = 1mh test circuit (figure 19) -18 - ns current rise time t ri -16 - ns current turn-off delay time t d(off)i - 105 - ns current fall time t fi -70 - ns turn-on energy e on -6675 j turn-off energy (note 1) e o...
Description 7A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

File Size 234.30K  /  8 Page

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    HGTG12N60B3

FAIRCHILD[Fairchild Semiconductor]
Part No. HGTG12N60B3
OCR Text ...CE = 480V VGE = 15V RG = 25 L = 1mh Test Circuit (Figure 17) (c)2003 Fairchild Semiconductor Corporation HGTG12N60B3 Rev. C1 HGTG12N60B3 Electrical Specifications PARAMETER Current Turn-On Delay Time Current Rise Time Current Tur...
Description 27A, 600V, UFS Series N-Channel IGBTs

File Size 199.68K  /  8 Page

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    HGTP12N60B3

Fairchild Semiconductor
Part No. HGTP12N60B3
OCR Text ...80v v ge = 15v r g = 25 ? l = 1mh test circuit (figure 17) -26 - ns current rise time t ri -23 - ns current turn-off delay time t d(off)i -150 - ns current fall time t fi -62 - ns turn-on energy (note 4) e on1 -150 - j turn-on energy (no...
Description 27A, 600V, UFS Series N-Channel IGBTs

File Size 223.34K  /  8 Page

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    INTERSIL[Intersil Corporation]
Part No. HGTP3N60A4D HGT1S3N60A4DS FN4818
OCR Text ...= 390V, VGE = 15V, RG = 50, L = 1mh, Test Circuit (Figure 24) 2 HGT1S3N60A4DS, HGTP3N60A4D Electrical Specifications PARAMETER Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy...
Description 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600V SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
From old datasheet system

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    HGT1S7N60C3DS9A

Fairchild Semiconductor
Part No. HGT1S7N60C3DS9A
OCR Text ..., r g = 50 ?, v ge = 15v, l = 1mh v ce(pk) = 480v 40 - - a v ce(pk) = 600v 6 - - a gate to emitter plateau voltage v gep i c = i c110 , v ce = 0.5 bv ces -8- v on-state gate charge q g(on) i c = i c110 , v ce = 0.5 bv ces v ge = 1...
Description 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

File Size 306.62K  /  8 Page

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