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100v 7a Datasheet PDF File

For 100v 7a Found Datasheets File :: 963 Search Time::1.032ms
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				Intersil, Corp. INTERSIL[Intersil Corporation]
Part No.	FSL913A0D FSL913A0D1 FSL913A0D3 FSL913A0R FSL913A0R4 FSL913A0R1 FSL913A0R3 FSL9130R3 FSL9130R4
OCR Text	100v, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Ra...7a, -100v, rDS(ON) = 0.300 * Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) * Single Eve...
Description	7a, -100v, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 7 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF 7a, -100v, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 7a 100v的，0.300欧姆，拉德硬，SEGR性，P通道功率MOSFET 7a/ -100v/ 0.300 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs 5A/ -100v/ 0.680 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
File Size	58.67K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF520L IRF520NSTRR IRF520NSTRL
OCR Text	... Avalanche Rated D VDSS = 100v RDS(on) = 0.20 G S ID = 9.7a Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Th...
Description	Power MOSFET(Vdss=100v/ Rds(on)=0.20ohm/ Id=9.7a) 100v Single N-Channel HEXFET Power MOSFET in a D2-Pak package
File Size	192.54K / 10 Page	View it Online	Download Datasheet

				SemeLAB Seme LAB
Part No.	2N7091
OCR Text	...4 (0.025) Dia. 0.89 (0.035) -100v -14A W 0.20W 2.54 (0.100) BSC 3.05 (0.120) BSC FEATURES * TO257aB HERMETIC PACKAGE FOR HIGH R...7a 56A 70W 27W -55 to 150C 300C Semelab Plc reserves the right to change test conditions, paramet...
Description	PCHANNEL ENHANCEMENT MODE TRANSISTOR P-CHANNEL ENHANCEMENT MODE TRANSISTOR
File Size	31.36K / 2 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	SGP02N12007 SGP02N120 SGD02N120 SGI02N120
OCR Text	...60 260 V mJ s W C VGE = 15V, 100v VCC 1200V, Tj 150C 1 2 J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time be...7a 60W 6A 50W 5A 4A 3A 2A 1A 0A 25C 40W 30W 20W 10W 0W 25C IC, COLLECTOR CURRENT ...
Description	Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation
File Size	375.94K / 13 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	IRFD9110
OCR Text	100v, 1.200 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOS...7a, 100v * rDS(ON) = 1.200 * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limited ...
Description	0.7a, 100v, 1.200 Ohm, P-Channel Power MOSFET
File Size	90.61K / 7 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	STD9NM50N
OCR Text	... sd =7.5a, di/dt=100a/s, v dd =100v, tj=150c (see figure 17) 420 3 14 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd =7.5a, di/dt=100a/s, v dd =100v, tj= 25c (see figure 17) 280 2 14 ns ...
Description	N-channel Power MOSFET
File Size	494.33K / 17 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	IRLS530A IRLS530
OCR Text	...ge Current : 10A (Max.) @ VDS = 100v n Lower RDS(ON) : 0.101 (Typ.) IRLS530A BVDSS = 100 V RDS(on) = 0.12 ID = 10.7 A TO-220F 1 2...7a,VGS=0V TJ=25,IF=14A diF/dt=100A/s Notes ; Repetitive Rating : Pulse Width Limited by Maximu...
Description	Advanced Power MOSFET
File Size	256.78K / 7 Page	View it Online	Download Datasheet

				ShenZhen FreesCale Electronics. Co., Ltd
Part No.	AOT7N60
OCR Text	...e i f =7a,di/dt=100a/ m s,v ds =100v maximum body-diode pulsed current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time diode forward voltage turn-off delaytime v gs =10v, v ds =300v, i d =7a, r g ...
Description	600V,7a N-Channel MOSFET
File Size	474.91K / 6 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors
Part No.	AOT7N60 AOT7N6010 AOTF7N60
OCR Text	...e i f =7a,di/dt=100a/ m s,v ds =100v maximum body-diode pulsed current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time diode forward voltage turn-off delaytime v gs =10v, v ds =300v, i d =7a, r g ...
Description	600V,7a N-Channel MOSFET
File Size	158.09K / 6 Page	View it Online	Download Datasheet

				ShenZhen FreesCale Electronics. Co., Ltd
Part No.	AOT7N70
OCR Text	...e i f =7a,di/dt=100a/ m s,v ds =100v v gs =0v, v ds =25v, f=1mhz switching parameters i s =1a,v gs =0v v ds =40v, i d =3.5a forward transconductance electrical characteristics (t j =25c unless otherwise noted) static parameters parameter co...
Description	AOT7N70
File Size	465.83K / 6 Page	View it Online	Download Datasheet

For 100v 7a Found Datasheets File :: 963 Search Time::1.032ms
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