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SamHop Microelectronics...
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Part No. |
STUD458S
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OCR Text |
...a www.samhop.com.tw mar,02,2011 1 details are subject to change without notice. t c =25 c g g s s d d g g s s stu series to-252aa(d-pak) st...6ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , ... |
Description |
Super high dense cell design for low RDS(ON).
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File Size |
107.30K /
8 Page |
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SamHop Microelectronics...
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Part No. |
STM6716
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OCR Text |
... -pulsed ac a www.samhop.com.tw 1 details are subject to change without notice. t c =25 c w p d c -55 to 150 t c =25 c thermal characteris...6ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , ... |
Description |
Super high dense cell design for low RDS(ON).
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File Size |
115.26K /
8 Page |
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it Online |
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SamHop Microelectronics...
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Part No. |
STUD10N20
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OCR Text |
...ent-continuous -pulsed ac a ver 1.0 www.samhop.com.tw aug,14,2014 1 details are subject to change without notice. t c =25 c g g s s d d g g...6ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , ... |
Description |
Super high dense cell design for low RDS(ON).
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File Size |
118.12K /
10 Page |
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it Online |
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SamHop Microelectronics...
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Part No. |
STB31L01
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OCR Text |
...rent-continuous -pulsed a a ver 1.1 www.samhop.com.tw sep,20,2012 1 details are subject to change without notice. t c =25 c w p d c -55 to ...6ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , ... |
Description |
Super high dense cell design for low RDS(ON).
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File Size |
132.21K /
7 Page |
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it Online |
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SamHop Microelectronics...
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Part No. |
STUD1855PL
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OCR Text |
1 arp,20 2005 ver1.1 s amhop microelectronics corp. p r oduc t s ummar y v ds s i d r ds (on) ( m )max -15a 68 @ v gs =-10v 85 @ v gs = -4....6ohm ns ns ns ns total g ate c harge g ate-s ource c harge gate-drain charge q g q gs q gd v ds =-30... |
Description |
S uper high dense cell design for low R DS (ON).
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File Size |
103.78K /
8 Page |
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it Online |
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SamHop Microelectronics...
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Part No. |
STD12L01A
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OCR Text |
...0 www.samhop.com.tw oct,15,2010 1 details are subject to change without notice. t c =25 c w p d c -55 to 150 t c =25 c thermal characteris...6ohm total gate charge rise time turn-off delay time fall time turn-on delay time v ds =10v , i d =6... |
Description |
Super high dense cell design for low RDS(ON).
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File Size |
87.36K /
7 Page |
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it Online |
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SamHop Microelectronics...
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Part No. |
STD12L01
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OCR Text |
...rent-continuous -pulsed b a ver 1.3 www.samhop.com.tw oct,29,2010 1 details are subject to change without notice. t c =25 c g g s s d d s t...6ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , ... |
Description |
Super high dense cell design for low RDS(ON).
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File Size |
88.78K /
7 Page |
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it Online |
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SamHop Microelectronics...
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Part No. |
STUD1955NL
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OCR Text |
...ent i ds s v ds 44v, v gs 0v == 1 gate-body leakage i gss v gs 20v, v ds 0v = = 100 na on char acte r is tics b g ate t hreshold voltage v g...6ohm ns ns ns ns total g ate c harge g ate-s ource c harge gate-drain charge q g q gs q gd v ds =15v... |
Description |
S uper high dense cell design for low R DS (ON).
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File Size |
100.70K /
8 Page |
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it Online |
Download Datasheet
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