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1VSN222 PAL16L8 MDC03 TSM923C 30021 30021 MRUS51S 122ML
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  1.6ohm Datasheet PDF File

For 1.6ohm Found Datasheets File :: 114    Search Time::1.172ms    
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    SamHop Microelectronics...
Part No. STUD458S
OCR Text ...a www.samhop.com.tw mar,02,2011 1 details are subject to change without notice. t c =25 c g g s s d d g g s s stu series to-252aa(d-pak) st...6ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , ...
Description Super high dense cell design for low RDS(ON).

File Size 107.30K  /  8 Page

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    SamHop Microelectronics...
Part No. STM6716
OCR Text ... -pulsed ac a www.samhop.com.tw 1 details are subject to change without notice. t c =25 c w p d c -55 to 150 t c =25 c thermal characteris...6ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , ...
Description Super high dense cell design for low RDS(ON).

File Size 115.26K  /  8 Page

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    SamHop Microelectronics...
Part No. STUD10N20
OCR Text ...ent-continuous -pulsed ac a ver 1.0 www.samhop.com.tw aug,14,2014 1 details are subject to change without notice. t c =25 c g g s s d d g g...6ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , ...
Description Super high dense cell design for low RDS(ON).

File Size 118.12K  /  10 Page

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    SamHop Microelectronics...
Part No. STB31L01
OCR Text ...rent-continuous -pulsed a a ver 1.1 www.samhop.com.tw sep,20,2012 1 details are subject to change without notice. t c =25 c w p d c -55 to ...6ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , ...
Description Super high dense cell design for low RDS(ON).

File Size 132.21K  /  7 Page

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    SamHop Microelectronics...
Part No. STUD1855PL
OCR Text 1 arp,20 2005 ver1.1 s amhop microelectronics corp. p r oduc t s ummar y v ds s i d r ds (on) ( m )max -15a 68 @ v gs =-10v 85 @ v gs = -4....6ohm ns ns ns ns total g ate c harge g ate-s ource c harge gate-drain charge q g q gs q gd v ds =-30...
Description S uper high dense cell design for low R DS (ON).

File Size 103.78K  /  8 Page

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    SamHop Microelectronics...
Part No. STD12L01A
OCR Text ...0 www.samhop.com.tw oct,15,2010 1 details are subject to change without notice. t c =25 c w p d c -55 to 150 t c =25 c thermal characteris...6ohm total gate charge rise time turn-off delay time fall time turn-on delay time v ds =10v , i d =6...
Description Super high dense cell design for low RDS(ON).

File Size 87.36K  /  7 Page

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    SamHop Microelectronics...
Part No. STD12L01
OCR Text ...rent-continuous -pulsed b a ver 1.3 www.samhop.com.tw oct,29,2010 1 details are subject to change without notice. t c =25 c g g s s d d s t...6ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , ...
Description Super high dense cell design for low RDS(ON).

File Size 88.78K  /  7 Page

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    SamHop Microelectronics...
Part No. STUD1955NL
OCR Text ...ent i ds s v ds 44v, v gs 0v == 1 gate-body leakage i gss v gs 20v, v ds 0v = = 100 na on char acte r is tics b g ate t hreshold voltage v g...6ohm ns ns ns ns total g ate c harge g ate-s ource c harge gate-drain charge q g q gs q gd v ds =15v...
Description S uper high dense cell design for low R DS (ON).

File Size 100.70K  /  8 Page

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    MPC17511

Motorola, Inc
Part No. MPC17511
OCR Text 1 Channel H-Bridge Driver IC MPC17511 is a monolithic type SMOS5AP SMARTMOS IC built in 1channel H-Bridge Driver constituted LDMOSFET, inpu...6ohm Test Circuit D Test Circuit E 5V 5V A 5V VC VM IN1 IN2 EN V For IG Te...
Description 1 Channel H-Bridge Driver IC

File Size 726.46K  /  10 Page

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For 1.6ohm Found Datasheets File :: 114    Search Time::1.172ms    
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