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  0.8m m Datasheet PDF File

For 0.8m m Found Datasheets File :: 2973    Search Time::1.484ms    
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    CPH3107 CPH3207

SANYO[Sanyo Semicon Device]
Part No. CPH3107 CPH3207
OCR Text ...t:mm 2150A [CPH3107/3207] 2.9 0.4 3 0.6 Features * Adoption of mBIT processes. * High current capacitance. * Low collector-to-emitter...8m m) 140 160 0 0 20 40 60 80 100 120 Collector-to-Emitter Voltage, V...
Description PNP Silicon Epitaxial Planar Transistors DC/DC Converter Applications
PNP/NPN Epitaxial Planar Silicon Transistors
NPN Silicon Epitaxial Planar Transistors DC/DC Converter Applications

File Size 51.02K  /  5 Page

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    CPH3109 CPH3209

SANYO[Sanyo Semicon Device]
Part No. CPH3109 CPH3209
OCR Text ...it:mm 2150A [CPH3109/CPH3209] 0.4 3 2.9 Features * Adoption of mBIT processes. * Large current capacitance. * Low collector-to-emitter...8m mounted on a ceramic board(600mm2x0.8mm) m) 140 160 0.01 0.1 For PNP, minus sign is ...
Description PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications
PNP/NPN Epitaxial Planar Silicon Transistors

File Size 54.33K  /  5 Page

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    K9F2808Q0C K9F2808Q0C-DCB0 K9F2808U0C-DCB0 K9F2808U0C-DIB0 K9F2808U0C-VCB0 K9F2808U0C-VIB0 K9F2816Q0C-DCB0 K9F2816Q0C-DI

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F2808Q0C K9F2808Q0C-DCB0 K9F2808U0C-DCB0 K9F2808U0C-DIB0 K9F2808U0C-VCB0 K9F2808U0C-VIB0 K9F2816Q0C-DCB0 K9F2816Q0C-DIB0 K9F2816U0C-DCB0 K9F2816U0C-DIB0 K9F2816U0C-YCB0 K9F2816U0C-YIB0 K9F2G08Q0m K9F2808U0C-YCB0 K9F2808U0C-YIB0
OCR Text ... History Revision No. History 0.0 1.0 Initial issue. TBGA PKG Dimension Change 48-Ball, 6.0mm x 8.5mm --> 63-Ball, 9.0mm x 11.0mm 1.A3 Pin...8m x 16 Bit NAND Flash memory PRODUCT LIST Part Number K9F2808Q0C-D,H K9F2816Q0C-D,H K9F2808U0C-Y,...
Description 16m x 8 Bit / 8m x 16 Bit NAND Flash memory
16m x 8 Bit , 8m x 16 Bit NAND Flash memory
16m x 8 bit NAND flash memory, 2.7 - 3.6V

File Size 579.95K  /  33 Page

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    L6560A L6560AD L6560D L6560

意法半导
STMICROELECTRONICS[STMicroelectronics]
Part No. L6560A L6560AD L6560D L6560
OCR Text ...YSTERETIC START-UP (ISTART-UP < 0.5mA) VERY LOW QUIESCENT CURRENT (< 3.5mA) INTERNAL START-UP TImER TRANSITION mODE OPERATING TOTEm POLE OUT...8m 1% 8 L6560 3 C2 22F 25V 6 R5 10 mOS STP8NA50 C5 47F 450V - TRANSFORmER T: c...
Description POWER FACTOR CORRECTOR

File Size 122.37K  /  11 Page

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    K9F6408Q0C K9F6408Q0C-B K9F6408Q0C-H K9F6408U0C-B K9F6408U0C-F K9F6408U0C-H K9F6408U0C-Q K9F6408U0C-T K9F6408U0C-V

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F6408Q0C K9F6408Q0C-B K9F6408Q0C-H K9F6408U0C-B K9F6408U0C-F K9F6408U0C-H K9F6408U0C-Q K9F6408U0C-T K9F6408U0C-V
OCR Text ... History Revision No. History 0.0 0.1 Initial issue. 1. IOL(R/B) of 1.8V device is changed. -min. Value: 7mA -->3mA -typ. Value: 8mA -->4m...8m x 8 Bit Bit NAND Flash memory PRODUCT LIST Part Number K9F6408Q0C-B,H K9F6408U0C-B,H K9F6408U0C...
Description 8m x 8 Bit Bit NAND Flash memory

File Size 495.88K  /  29 Page

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    K9F6408U0A-TCB0 K9F6408U0A-TIB0

SAMSUNG[Samsung semiconductor]
Samsung Electronics Inc
Part No. K9F6408U0A-TCB0 K9F6408U0A-TIB0
OCR Text ... History Revision No. History 0.0 0.1 0.2 Initial issue. 1. Revised real-time map-out algorithm(refer to technical notes) Changed device n...8m x 8 Bit NAND Flash memory FEATURES * Voltage Supply : 2.7V ~ 3.6V * Organization - memory Cell ...
Description From old datasheet system
EEPROm,NAND FLASH,8mX8,CmOS,TSOP,44PIN,PLASTIC
8m x 8 Bit NAND Flash memory

File Size 344.78K  /  26 Page

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    UPD488448 UPD488448FB-C60-53-DQ1 UPD488448FB-C60-53-DQ2 UPD488448FB-C71-45-DQ2 UPD488448FB-C80-45-DQ1 UPD488448FB-C80-45

NEC[NEC]
Part No. UPD488448 UPD488448FB-C60-53-DQ1 UPD488448FB-C60-53-DQ2 UPD488448FB-C71-45-DQ2 UPD488448FB-C80-45-DQ1 UPD488448FB-C80-45-DQ2 UPD488448FF-C60-53-DQ1 UPD488448FF-C60-53-DQ2 UPD488448FF-C71-45-DQ1 UPD488448FF-C71-45-DQ2 UPD488448FF-C80-45-DQ1 UPD488448FF-C80-45-DQ2 UPD488448FB-C71-45-DQ1
OCR Text ... DRAm Core 32x64 SAmp SAmp 0/1 0 PREC 512x64x128 32x64 SAmp SAmp 0/1 0 RD, WR 64 Internal DQB Data Path 64 Bank 0 Bank 1 Bank 2 Internal DQA Data Path 64 64 SAmp 1/2 SAmp 1/2 RCLK 8 8 * * *...
Description 128 m-bit Direct Rambus⑩ DRAm
128 m-bit Direct Rambus DRAm

File Size 1,880.61K  /  80 Page

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    CPH3303

SANYO[Sanyo Semicon Device]
Part No. CPH3303
OCR Text ...s unit:mm 2152 [CPH3303] 2.9 0.4 0.6 0.2 0.15 3 0 to 0.1 1.6 2.8 1 1.9 2 0.2 0.6 Specifications Absolute maxim...8m m ) 140 160 0 0 20 40 60 80 100 120 Ambient Temperature, Ta - C ...
Description 1600 mA, 20 V, P-CHANNEL, Si, SmALL SIGNAL, mOSFET
P-Channel mOS Silicon FET Ultrahigh-Speed Switching Applications

File Size 141.37K  /  4 Page

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    CPH3304

SANYO[Sanyo Semicon Device]
Part No. CPH3304
OCR Text ...s unit:mm 2152 [CPH3304] 2.9 0.4 0.6 0.2 0.15 3 0 to 0.1 1.6 2.8 1 1.9 2 0.2 0.6 Specifications Absolute maxim...8m 0.2 m ) 0 0 20 40 60 80 100 120 140 160 Ambient Temperatur...
Description P-Channel mOS Silicon FET Ultrahigh-Speed Switching Applications

File Size 131.67K  /  4 Page

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    CPH3305

SANYO[Sanyo Semicon Device]
Part No. CPH3305
OCR Text ...ions unit:mm 2152A [CPH3305] 0.4 3 0.6 0.2 2.9 0.15 0.05 1.6 2.8 1 1.9 2 0.2 0.6 1 : Gate 2 : Source 3 : Drain ...8m m ) 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta - C IT01189 No.6426-3/4 ...
Description P-Channel Silicon mOSFET Ultrahigh-Speed Switching Applications

File Size 33.60K  /  4 Page

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