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  -0.7 Datasheet PDF File

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    Cal-Chip Electronics
Part No. 07-3323-3803 07-3323-3203 07-3323-3103 07-3323-3703 07-3323-3403
OCR Text ...odule without actuating element 07-3321-1 104.5 00 00/ 00 Module with actuating element 07-3321-1 Complete order no. Please enter code number. 1/34 Switch modules for panel-mounted installation with terminals Explosio...
Description SCHALTMODUL EX 2XN/O 3MT
SCHALTMODUL EX 1XN/C 3MT
SCHALTMODUL EX 1XN/O&N/C
SCHALTMODUL EX 1XN/O 3MT SCHALTMODUL主任1XN /输出3MT
SCHALTMODUL EX 2XN/C 3MT SCHALTMODUL主任2XN /3MT

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    SIEMENS AG
Part No. BAT17-07
OCR Text 07 oct-07-1999 1 silicon schottky diode ? for mixer applications in the vhf / uhf range ? for high-speed switching applications vps05178 2 1 3 4 32 eha07008 1 4 type marking pin configuration package bat 17-07 57s 1 = c1 2 = c2 3 = a2 4 =...
Description Silicon Schottky Diode(肖特基硅二极

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    Vishay
Part No. SUU50N03-07
OCR Text 07 vishay siliconix document number: 71295 s-01707?rev. a, 07-aug-00 www.vishay.com 1 n-channel 30-v (d-s) 175 c mosfet product summary v ds (v) r ds(on) ( ) i d (a) a, b 0.007 @ v gs = 10 v 25 30 0.010 @ v gs = 4.5 v 18 d g ...
Description TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 25A I(D) | TO-251 晶体管| MOSFET的| N沟道| 30V的五(巴西)直|5A条(丁)|51
N-Channel 30-V (D-S) 175C MOSFET

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    S560-6611-07

Bel Fuse Inc.
Part No. S560-6611-07
OCR Text ... Side Line Side S560-6611-07 1 : 1.45 100 5 60 1.3 1.9 All measurements are made with pins 2 and 3 connected and pins 6 and 7 connected 1. Inductance measured at 10 kHz, 0.1 Vac 2. Measurements made with 100 sourc...
Description ADSL Magnetics Globespan

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    SPD50N03S2-07

INFINEON[Infineon Technologies AG]
Part No. SPD50N03S2-07
OCR Text 07 OptiMOS(R) Power-Transistor Feature * N-Channel Product Summary VDS R DS(on) ID 30 7.3 50 P- TO252 -3-11 V m A * Enhancement mode * Excellent Gate Charge x RDS(on) product (FOM) * Superior thermal resistance * 175C operat...
Description OptiMOS Power-Transistor 的OptiMOS功率晶体
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, DPAK, RDSon = 7.3mOhm, 50A, NL

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    IPD90N06S4-07

Infineon Technologies AG
Part No. IPD90N06S4-07
OCR Text 07 OptiMOS(R)-T2 Power-Transistor Product Summary V DS R DS(on),max ID 60 6.9 90 PG-TO252-3-11 V m A Features * N-channel - Enhancement mode * AEC Q101 qualified * MSL1 up to 260C peak reflow * 175C operating temperature * Green Pr...
Description OptiMOS-T2 Power-Transistor

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    SIEMENS AG
Part No. BAR64-07
OCR Text 07 oct-05-1999 1 silicon pin diode array ? high voltage current controlled rf resistor for rf attenuator and switches ? frequency range above 1 mhz ? low resistance and short carrier lifetime ? for frequencies up to 3 ghz vps05178 2 ...
Description Silicon PIN Diode Array(硅型PIN二极管阵

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    BAT62-07 BAT62-07W BAT6207W Q62702-A1198

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BAT62-07 BAT62-07W BAT6207W Q62702-A1198
OCR Text ...emiconductor Group 11 Sep-07-1998 1998-11-01 BAT 62-07W Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Reverse current typ. 0.58 max. 10 1 Unit IR VF ...
Description Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies)
From old datasheet system

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    Infineon
Part No. SPP80N06S2-07 SPB80N06S2-07
OCR Text 07 spb80n06s2-07 preliminary data optimos = == = power-transistor product summary v ds 55 v r ds ( on ) 6.6 m i d 80 a feature n-channel enhancement mode 175c operating temperature avalanche rated d v /d t rated p-to263-...
Description Low Voltage MOSFETs - TO220/263/262; 80A; 55V; NL; 6.6mOhm
N-Channel OptiMOS Power Transistor

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